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The photos are real, taken on site!

2MBI150US-120-50

model:

2MBI150US-120-50

brand:

FUJI

type:

IGBT Module

description:

1200V 200A

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The photos are real, taken on site!

2MBI150US-120-50

model:

2MBI150US-120-50

brand:

FUJI

type:

IGBT Module

description:

1200V 200A

Contact Now

2MBI150US-120-50

The parameters are:

Absolute maximum values for 2mbi150us-120-50: (1) manifold emitter voltage:

1200V; (2) shutter voltage emitter: + 20v; (3) manifold current: 200a; (4) dissipation of collector power: 780w; (5) transformation temperature:

150 units; (6) storage temperature: -40 to 125 degrees.

Features:

Characteristics 2mbi150us-120-50: (1) manifold current at zero shutter voltage: 2ma; (2) leakage current emitter shutter: 400na;

(3) cut-off voltage emitter: 6.5v; (4) input capacity: 17pf; (5) return recovery time: 0.35mb.

2mbi150-120-50 is a module produced by Fuji electric. It is an igbt module with a rated voltage of 1200 v and a rated current of 150 a.

It is intended for use in applications such as engine control, uninterruptible power supply systems and inverters. It has a high switching rate,

Low losses and high efficiency. It is also overstretched and has a wide range of operating temperatures. (just for the record)