2MBI150U2A-060-50
2MBI150TA-060 2MBI150U2A-060-50 2MBI150UA-060-50 2MBI150TA-060-50 2MBI150VA-060-50 2MBI150TA-060 2MBI100TA-060-52
IGBT, DUAL, MODULE, 150A, 600V, NPT; Transistor polarity: n-channel; Direct current of collector: 150a; Manifold saturation voltage - emitter vce (on):
2.35v. Dissipated power pd: 500w; Manifold voltage emitter v (br) CEO: 600 v; Transistor hull style: module; Number of findings: 7;
Operating temperature Max. 150 c; Product range: -; IC @ vce sat: 150a; IC continuous a current Max: 150a; Current temperature: 25 c; External depth: 34 mm;
External length/height: 30 mm; External width: 92 mm; Decline time tf: 480ns; Full power temperature: 25 c; Insulation voltage: 2.5kv;
Spam temperature tj Max: 150 c; Module configuration: double; Number of transistors: 2; Dissipated power Max: 500w; Pulse current icm: 300a;
Rise time: 400 ns; Type of clamp: screw; Voltage vces: 600v
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