2MBI100VA-120-50
Igbt module, 1.2kv, 100a; Transistor polarity: n-channel; Direct current of collector: 100a; Manifold saturation voltage - emitter vce (on): 1.75v;
Dissipated power pd: 555w; Manifold voltage emitter v (br) CEO: 1.2 kv; Transistor hull style: module; Number of conclusions: 7 contacts;
Operating temperature Max. 150 c; Product range: -; IC @ vce sat: 100a; IC continuous a current Max: 150a; Current temperature: 25 c; External depth: 62 mm; External length/height:
30 mm; External width: 108 mm; Decline time tf: 450ns; Full power temperature: 25 c; Insulation voltage: 2.5kv; Spam temperature tj Max: 150 c; Module configuration: double;
Number of transistors: 2; Maximum dissipated power: 780 w; Pulse current icm: 300 a; Rise time: 350 ns; Type of clamp: screw; Voltage vces: 1.2 kv
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