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2MB1200U4B-120-50

model:

2MB1200U4B-120-50

brand:

FUJI

type:

Double module igbt

description:

200A 1200V

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The photos are real, taken on site!

2MB1200U4B-120-50

model:

2MB1200U4B-120-50

brand:

FUJI

type:

Double module igbt

description:

200A 1200V

Contact Now

2MB1200U4B-120-50

2MBI150U4B-120-50 2MBI200U4B-120-50 2MBI150UM-120-50 2MBI150UM-120 2MBI200UM-120-50 2MBI200UM-120 2MBI150U4B-120 2MBI200U4B-120

DUAL IGBT MODULE 200A 1200V TRENCH; Module configuration :1 pair of serial connections; Transistor polarity: n channel;

Direct current of collector: 300a; Manifold voltage - emitter vces: 2.25v; Dissipable power Max: 1.04kw; Manifold emitter; rohs compliant: yes

Newark

IGBT, DUAL, MODULE, 200A, 1200V; Transistor polarity: n channel; Direct current of collector: 300a; Manifold voltage - emitter vces: 2.25v; Dissipable power pd: 1.04kw;

Manifold voltage emitter v (br) CEO: 1.2kv; Transistor hull type: module; Number of conclusions :7; Current I findings :7; IC @ vce sat: 200a; IC continuous a Max: 300a; Current temperature :25 c;

External depth :45 mm; External length/height :30 mm; External width :92 mm; Decline time tf: 410ns; Rated full power temperature :25 c; Insulation voltage :2. 5kV;

Spam temperature tj Max:150 c; Module configuration: double; Number of transistors :2; Package/body: m233; Dissipable power Max: 1.04kw;

Dissipable power pd: 1.04kw; Dissipable power pd: 1.04kw; Pulse current icm: 600a; Rise time :320ns; Type of clamp: screw; Voltage vces: 1.2kv