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The photos are real, taken on site!

2DI100D-050

model:

2DI100D-050

brand:

FUJI

type:

IGBT modules

description:

Discrete semiconductor devices > igbt modules

Contact Now

The photos are real, taken on site!

2DI100D-050

model:

2DI100D-050

brand:

FUJI

type:

IGBT modules

description:

Discrete semiconductor devices > igbt modules

Contact Now

2DI100D-050

This is the igbt module at 100 a, 450 v, with two bipolar and mosfet transistors. Igbt is a switch device,

Which can be used for quick switching with high efficiency in different types of electronic devices.

These devices are mainly used in amplifiers for switching/processing complex wave patterns with latitude-impulse modulation (SHM).

It combines low saturation voltage transistor with high input resistance and switching speed mosfet. The result of this combination,

Provides the output switching and conduction of a bipolar transistor, but its voltage is regulated as in a mop-transistor.

Features:

High current gain factor

• includes free travel diode

• isolated type

The parameters are:

Manifold base voltage, vcb-600 v

Emitter manifold voltage, vce - 600 v

Emitter manifold voltage, vce (SUS) 450 v

Emitter base voltage, veb-7 v

Manifold current, ic-100a

Peak manifold current, icp-200a

Base current, ib-6a

Peak base current, ibp-12a

Base manifold current, icb-1.0ma

Emitter base current, ieb-400 ma

Manifold dissipated power, pc-620 w

Spia temperature, tj - 150 degrees

Storage temperature range, TSTG - from -40 to +125 PPM

Areas of application:

• high power switching

Control of ac engines

• dc motor control

Uninterrupted power supply