2MB1300TE-060
Igbt model 2mbi300u2b-060 produced by Fuji electric. Neacae (a) nianeai:
Nominal characteristics: 300a, 600v.
Semiconductors - - -
2MBI300S-060 2MBI300TE-060 2MBI300U2B-060-50 2MBI300TE-060-50 2MBI300U2B-060 2MBI300S-060-50
Maximum manifold voltage - emitter (vce): 600 v
Maximum manifold current (IC): 300 a
Igbt type: isolated closed bipolar transistor
Case: power module
Electrical characteristics:
Manifold emitter transfer locking voltage (vces): 600 v
Manifold dc current (IC): 300 a
Manifold pulse current (icp): 600 a
Voltage shutter emitter (vge): 20 v (Max)
Shutter threshold voltage (vge (th)): 6 v (minimum)
Manifold emitter saturation voltage (vce (sat)): 2.3 v (maximum) at 300 a
Thermal characteristics:
Operating temperature (tj): -40 c to 150 c
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