IGBTs (Insulated Gate Bipolar Transistors)
Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Conditions
Inverse Diode IF= IC Tcase 25/80 °C IFM= ICM Tcase = 25/80 °C; = 10 ms; sin.; 150 °C IFSM = 10 ms; °C I2t
Symbol V(BR)CES VGE(th) ICES IGES VCEsat gfs CCHC Cies Coes Cres LCE td(on) tr td(off) tf Eon 5) Eoff 5) Conditions
Inverse Diode VF = VEC VF = VEC 125 °C VTO (125) °C2) IRRM Qrr (125) °C2) FWD of types "GAL", "GAR" VF = VEC VF = VEC 125 °C VTO (125) °C2) IRRM Qrr (125) °C2) Thermal Characteristics per IGBT Rthjc per diode / FWD "GAL; GAR" Rthjc per module Rthch
Features MOS input (voltage controlled) N channel, Homogeneous Si Low inductance case Very low tail current with low temperature dependence High short circuit capability, self limiting 6 * Icnom Latch-up free Fast & soft inverse CAL diodes8) Isolated copper baseplate using DCB Direct Copper Bonding Technology Large clearance (10 mm) and creepage distances (20 mm). Typical Applications: 6 -115 Switching (not for linear use) Tcase = 25 °C, unless otherwise specified = IC, V, diF/dt = 800 A/µs, VGE V 3) Use VGEoff V 5) See fig. + 3; RGoff 15 6) The free-wheeling diodes of the GAL and GAR types have the data of the inverse diodes of SKM D 7) Visol = 4000 Vrms on request 8) CAL = Controlled Axial Lifetime Technology. Cases and mech.
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