2MBI300U4H-120-50
2MBI300U4D-120-50 2MBI300U4H-120-50 2MBI300U4H-120 2MBI300U4D-120 2MBI300U4H-170
2MBI300U4D-120-54 2MBI300U4H-120-55 2MBI300U4H-170-50 2MBI300UC-120-50 2MBI300UC-120
Bipolar transistor with insulated closure (igbt), 2 modules in packaging, 1200 v, 300 a, m234; Type of transistor: n-channel;
Dc manifold current: 300a;
Manifold voltage - emitter vces: 2.05 v; Power dissipation pd: 1.47 kw; Manifold voltage emitter v (br) CEO: 1.2 kv;
Transistor hull: module; Number of conclusions: 7;
Module configuration: double; Maximum power dissipation: 1.47 kw
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